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  features l subminiature plastic package with lens l visible-cut package l high sensitivity: 1.0 ma (1000 lx ) applications l tape start/end mark sensor for vtrs, cassette tape recorders, etc. l rotary encoders l touch screen phototransistor phototransistor subminiature package phototransistor S2829 S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. i f vcc v o r l pulse input tr v o i f 90 % 10 % tf kptrc0001ea  response time measurement circuit  


      
  
      
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hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 1 hamamatsu photonics k.k. phototransistor S2829 cat. no. kptr1001e02 mar. 2001 dn 3.5 5? 10? visible-cut resin (black) 3.5 0.6 0.4 2.54 (specified at the lead root) (1.0) (1.15) 1.6 6.0 ?1.0 1.3 1.6 0.72 0.57 0.16 r0.45 10? 5? tolerance unless otherwise noted: ?.2, ?? shaded area indicates burr. values in parentheses are not guaranteed, but for reference. emitter collector burr (typ. v ce =5 v, e=1000 lx ) relative photocurrent (%) ambient temperature ( ? c) -25 0 25 50 75 100 140 160 120 100 80 60 40 20 (typ. ta=25 ? c) relative sensitivity (%) wavelength (nm) 100 80 60 40 20 0 400 500 600 700 800 900 1000 1100 1200   spectral response kptrb0005ea   dimensional outline (unit: mm)   collector power dissipation vs. ambient temperature collector power dissipation (mw) ambient temperature ( ? c) 100 80 60 40 20 0 -25 0 25 50 75 100 kpcb0001ea   photocurrent vs. ambient temperature kptrb0002ea  dark current vs. ambient temperature (typ. v ce =20 v) dark current ambient temperature ( ? c) -25 0 25 50 75 100 10 pa 100 pa 1 na 10 na 100 na 1  a kptrb0003ea kptra0001ea


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